1994. 6. 27 1/2 semiconductor technical data KTD1414 epitaxial planar npn transistor revision no : 0 switching applications. hammer driver, pulse motor driver applications. features high dc current gain : h fe =2000(min.) at v ce =2v, i c =1a. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5 v collector current i c 4 a base current i b 0.5 a collector power dissipation (tc=25 1 ) p c 25 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 4.5k ? base collecto r emitter 300 ? ~ _ ~ _ characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =100v, i e =0 - - 20 a emitter cut-off current i ebo v eb =5v, i c =0 - - 2.5 ma collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 80 - - v dc current gain h fe (1) v ce =2v, i c =1a 2000 - - h fe (2) v ce =2v, i c =3a 1000 - - saturation voltage collector-emitter v ce(sat) i c =3a, i b =6ma - - 1.5 v base-emitter v be(sat) i c =3a, i b =6ma - - 2.0 switching time turn-on time t on 10 ? cc v =30v duty cycle 1% i b2 b2 i =-i =6ma b1 b2 i i b1 20 sec b1 i input output 0 - 0.2 - s storage time t stg - 1.5 - fall time t f - 0.6 - equivalent circuit
1994. 6. 27 2/2 KTD1414 revision no : 0 c collector current i (a) 0 collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v 0 collector-emitter voltage v (v) ce ce c i - v safe operating area ce collector-emitter voltage v (v) 1 3 10 30 c collector current i (a) collector-emitter saturation ce(sat) 0.3 5 3 0.2 collector current i (a) c v - i 12345 1 2 3 4 common emitter tc=25 c 500 450 400 350 300 250 i =200 a 0 b 1234 5 1 2 3 4 common emitter tc=100 c 300 250 200 175 150 0 i =125 a b 12345 1 2 3 4 tc=-55 c common emitter 800 700 600 500 0 i =400 a b ce(sat) c voltage v (v) 1 0.5 0.5 1 3 common emitter i /i =500 c b tc=-55 c tc=25 c tc=100 c 100 300 0.05 0.1 0.3 0.5 1 3 5 10 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c * c i max. (continuous) 1ms 10m s * * v max. ceo dc operation tc= 25 c h - i c collector current i (a) 0.1 fe 300 dc current gain h fe c 0.3 0.5 1 3 5 10 500 1k 3k 5k 10k common emitter v =2v ce tc=100 c tc=25 c tc = - 55 c
|
